| Part Number | 2SD612 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min.) ·High Collector Dissipation ·Wide Area of Safe Operation ·Complement to Type 2SB632 ·M... |
| Features |
Breakdown Voltage
IC= 10μA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(sat) Base-Emitter Sa...
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| Datasheet |
 2SD612 Datasheet
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