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2SD5075

INCHANGE
Part Number 2SD5075
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance ...
Features IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2.5A; IB= 0.8A VCB= 800V; IE= 0 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 fT Cur...

Datasheet PDF File 2SD5075 Datasheet

2SD5075   2SD5075   2SD5075  




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