| Part Number | 2SD2256 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed ... |
| Features |
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA, IE= 0
120
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA, RBE= ∞
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA, IC= 0
7
V
VCE(sat)-1
Collector-Emitter Satu...
|
| Datasheet |
 2SD2256 Datasheet
|
