Part Number | 2SD2250 |
Manufacturer | INCHANGE |
Title | Silicon NPN Darlington Power Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation... |
Features |
ise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 6mA
ICBO
Collector Cuto...
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Datasheet | 2SD2250 Datasheet |