| Part Number | 2SD157 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·Wide Area ... |
| Features |
ONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
300
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0
300
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100μA; IC= 0
7
V
VCE(sat) Collector...
|
| Datasheet |
 2SD157 Datasheet
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