Part Number | 2SD1532 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V ·Fast Switching Speed ·Minimu... |
Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA ,IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA
VBE(on)
Ba...
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Datasheet | 2SD1532 Datasheet |