| Part Number | 2SC4162 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot... |
| Features |
or-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.6A
VBE(sat) Base-Emitter Sa...
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| Datasheet |
 2SC4162 Datasheet
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