| Part Number | 2SC3416 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
O Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 20mA; IB= 2mA
ICBO
Colle...
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| Datasheet |
 2SC3416 Datasheet
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