| Part Number | 2SB850 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.2V(Max) @IC= -5A ·Wide Area ... |
| Features |
c Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
...
|
| Datasheet |
 2SB850 Datasheet
|
