| Part Number | 2SB817E |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Comple... |
| Features |
MBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞
-140
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6...
|
| Datasheet |
 2SB817E Datasheet
|
