| Part Number | 2SB817C |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·... |
| Features |
IONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞
-140
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
-160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6
V
VCE(sat) Collector...
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| Datasheet |
 2SB817C Datasheet
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