| Part Number | 2SB1430 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturatio... |
| Features |
Transistor
2SB1430
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA
-1.5
V
VBE(sat) Base-Emitter Saturation Voltage
...
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| Datasheet |
 2SB1430 Datasheet
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