| Part Number | 2N6425 |
| Manufacturer | INCHANGE |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLI... |
| Features |
n Voltage IC= -0.25A; IB=-0.025A
VBE(on)
Base-Emitter On Voltage
IC= -0.1A; VCE=-10V
hFE
DC Current Gain
IC=-0.1A; VCE=-20V
MIN TYP. MAX UNIT
-300
V
-100 uA
-0.25 mA
-2.5
V
-1.0
V
35
NOTICE： ISC reserves the rights to make changes of...
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| Datasheet |
 2N6425 Datasheet
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