| Part Number | 2N6280 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLIC... |
| Features |
age IC=20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=50A; IB= 10A
hFE-1
DC Current Gain
IC=1A; VCE= 4V
hF...
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| Datasheet |
 2N6280 Datasheet
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