| Part Number | 2N6276 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLIC... |
| Features |
ge IC= 50A; IB= 10A
VBE(sat) Base-Emitter Saturation Voltage
IC=50A; IB= 10A
hFE
DC Current Gain
IC=20A; VCE=4V
MIN TYP. MAX UNIT
140
V
100 uA
50
uA
3
V
3.5
V
30
120
NOTICE： ISC reserves the rights to make changes of the content her...
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| Datasheet |
 2N6276 Datasheet
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