| Part Number | 2N6212 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lo... |
| Features |
emiconductor
2N6212
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -0.5mA ; IC= 0
VCE(sat) Co...
|
| Datasheet |
 2N6212 Datasheet
|
