| Part Number | 2N6033 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation A... |
| Features |
Emitter-Base Cutoff Current
VEB= 7V
VCE(sat) Collector-Emitter Saturation Voltage IC= 40A; IB= 4A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 40A; IB= 4A
hFE
DC Current Gain
IC= 40A; VCE= 2V
2N6033
MIN TYP. MAX UNIT
120
V
25
mA
10
m...
|
| Datasheet |
 2N6033 Datasheet
|
