| Part Number | 2N6032 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APP... |
| Features |
er-Base Cutoff Current
VEB= 7V
VCE(sat) Collector-Emitter Saturation Voltage IC= 50A; IB= 5A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 50A; IB= 5A
hFE
DC Current Gain
IC= 50A; VCE= 2.6V
2N6032
MIN TYP. MAX UNIT
90
V
25
mA
10
mA
10...
|
| Datasheet |
 2N6032 Datasheet
|
