| Part Number | 2N5665 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLIC... |
| Features |
IC=3A; IB= 0.6A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=5A; IB= 1A
hFE-1
DC Current Gain
IC=500mA; VCE= 2V
hFE-...
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| Datasheet |
 2N5665 Datasheet
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