| Part Number | 2N5661 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLIC... |
| Features |
C= 1A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
hFE-1
DC Current Gain
IC=50mA; VCE= 2V
h...
|
| Datasheet |
 2N5661 Datasheet
|
