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H57V2582GTR-60J

Hynix Semiconductor
Part Number H57V2582GTR-60J
Manufacturer Hynix Semiconductor
Title 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. R...
Features
● Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2...

Datasheet PDF File H57V2582GTR-60J Datasheet

H57V2582GTR-60J   H57V2582GTR-60J   H57V2582GTR-60J  




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