| Part Number | 4AM11 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel/P-Channel Power MOS FET Array |
| Description | 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0... |
| Features |
• Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor... |
| Datasheet |
 4AM11 Datasheet
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