| Part Number | 4AK19 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N Channel MOS FET High Speed Power Switching |
| Description | 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R D... |
| Features |
• Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. ... |
| Datasheet |
 4AK19 Datasheet
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