| Part Number | HPU600R2K3DN |
| Manufacturer | HUAJING MICROELECTRONICS |
| Title | Silicon N-Channel Power MOSFET |
| Description | HPU600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ... |
| Features |
l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test
Applications：
Power switch circuit of adaptor and ...
|
| Datasheet |
 HPU600R2K3DN Datasheet
|
