| Part Number | HPD650R600SA |
| Manufacturer | HUAJING MICROELECTRONICS |
| Title | Silicon N-Channel Power MOSFET |
| Description | HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve swi... |
| Features |
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
650 V 9A
125 W 0.52 Ω
Symbol ...
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| Datasheet |
 HPD650R600SA Datasheet
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