| Part Number | HPD650R1K9DN |
| Manufacturer | HUAJING MICROELECTRONICS |
| Title | Silicon N-Channel Power MOSFET |
| Description | HPD650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ... |
| Features |
l Superior switching performance l Low on resistance(Rdson≤1.9Ω) l Low gate charge (Typical Data:13.4nC) l Low reverse transfer capacitances(Typical:5.6pF) l 100% Single pulse avalanche energy test
Applications：
Power switch circuit of adaptor and ...
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| Datasheet |
 HPD650R1K9DN Datasheet
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