| Part Number | HM2318B |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hi... |
| Features |
40V/3.9A, RDS(ON) = 42mΩ (Typ.) @VGS = 10V
40V/3.5A, RDS(ON) = 53mΩ @VGS = 4.5V
40V/2.0A, RDS(ON) = 75 mΩ @VGS = 2.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package ...
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| Datasheet |
 HM2318B Datasheet 225.50KB |
