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HM2312B

H&M Semiconductor
Part Number HM2312B
Manufacturer H&M Semiconductor
Title N-Channel Enhancement Mode Power MOSFET
Description The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This de...
Features
● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package D G S Schematic diagram 2312 Marking and pin assignment Application
●Batte...

Datasheet PDF File HM2312B Datasheet 444.13KB

HM2312B   HM2312B   HM2312B  




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