| Part Number | HM2312B |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This de... |
| Features |
● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram 2312 Marking and pin assignment Application ●Batte... |
| Datasheet |
 HM2312B Datasheet 444.13KB |
