| Part Number | HM2310PR |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This d... |
| Features |
● VDS =60V,ID =4.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter D G S Schematic diagram SOT-89 -... |
| Datasheet |
 HM2310PR Datasheet 383.25KB |
