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HM2310B

H&M Semiconductor
Part Number HM2310B
Manufacturer H&M Semiconductor
Title N-Channel Enhancement Mode Power MOSFET
Description The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. Thi...
Features l
 60V/4.0A, RDS(ON) = 55mΩ @VGS = 10V l
 60V/3.0A, RDS(ON) = 60mΩ @VGS = 4.5V l
 Super high density cell design for extremely low RDS(ON) l
 Exceptional on-resistance and maximum DC current capability l
 SOT-23 package design 1.Gate 2.Source 3.Drai...

Datasheet PDF File HM2310B Datasheet 690.38KB

HM2310B   HM2310B   HM2310B  




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