| Part Number | HM2310B |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. Thi... |
| Features |
l 60V/4.0A, RDS(ON) = 55mΩ @VGS = 10V l 60V/3.0A, RDS(ON) = 60mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 1.Gate 2.Source 3.Drai... |
| Datasheet |
 HM2310B Datasheet 690.38KB |
