| Part Number | HM2309C |
| Manufacturer | H&M Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. ... |
| Features |
-60V/-3.0A, RDS(ON) = 150m-ohm (Typ.) @VGS = -10V
-60V/-2.5A, RDS(ON) = 185m-ohm @VGS = -4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
1.Gate 2.Source ...
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| Datasheet |
 HM2309C Datasheet 424.78KB |
