| Part Number | BL1N60 |
| Manufacturer | GME |
| Title | N-Channel Power Mosfet |
| Description | Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (ty... |
| Features |
RDS(ON) =9.3Ω@VGS = 10V. Pb Ultra Low gate charge (typical 5.0nC) Lead-free Low reverse transfer capacitance (CRSS = typical 3.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness B... |
| Datasheet |
 BL1N60 Datasheet
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