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2SD999

GME
Part Number 2SD999
Manufacturer GME
Title NPN Silicon Transistor
Description NPN Silicon Epitaxial Transistor FEATURES z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linea...
Features z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A) z Complements to PNP type 2SB798 Pb Lead-free Production specification 2SD999 SOT-89 ORDERING INFORMATION ...

Datasheet PDF File 2SD999 Datasheet

2SD999   2SD999   2SD999  




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