| Part Number | 2SB834 |
| Manufacturer | GME |
| Title | PNP Epitaxial Silicon Transistor |
| Description | PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-20... |
| Features |
z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A.
z DC Current Gain HFE=60-200@IC=0.5A.
z Complememtary to PNP 2SD880.
Pb
Lead-free
Production specification
2SB834
TO-220AB
MAXIMUM RATING operating temperature range appl...
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| Datasheet |
 2SB834 Datasheet
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