| Part Number | 2N7002 |
| Manufacturer | GME |
| Title | N-Channel Power Mosfet |
| Description | Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES High Density Cell Design For Low Pb RDS(ON). L... |
| Features |
High Density Cell Design For Low Pb RDS(ON). Lead-free Voltage Controlled Small Signal Switch. Rugged and Reliable. High Saturation Current Capability. MSL 1 APPLICATIONS N-channel enhancement mode effect transistor. Switchin... |
| Datasheet |
 2N7002 Datasheet
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