| Part Number | MRFG35010 |
| Manufacturer | Freescale Semiconductor |
| Title | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| Description | www..com Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor De... |
| Features |
19 −5 33 −65 to +175 175 −20 to +90 Unit Vdc W W/°C Vdc dBm °C °C °C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Class A Class AB Symbol RθJC Value 5.3 4.8 Unit °C/W
1. For ...
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| Datasheet |
 MRFG35010 Datasheet
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