| Part Number | FDFME2P823ZT |
| Manufacturer | Fairchild Semiconductor |
| Title | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Description | Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, I... |
| Features |
General Description
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A Low profile: 0.55 ...
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| Datasheet |
 FDFME2P823ZT Datasheet
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