| Part Number | FDFMA3N109 |
| Manufacturer | Fairchild Semiconductor |
| Title | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Description | This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. ... |
| Features |
a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptiona...
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| Datasheet |
 FDFMA3N109 Datasheet
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