| Part Number | CGHV27200 |
| Manufacturer | Cree |
| Title | GaN HEMT |
| Description | PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor... |
| Features |
• 2.5 - 2.7 GHz Operation • 16 dB Gain • -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1 – Oct • 29 % Efficiency at 50 W PAVE • High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Rat... |
| Datasheet |
 CGHV27200 Datasheet
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