| Part Number | CGHV1J006D |
| Manufacturer | Cree |
| Title | GaN HEMT Die |
| Description | CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a sil... |
| Features |
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
FEATURES
• 17 dB Typ. Small Signal Gain at 10 GHz • 60% Typ. PAE at 10 GHz • 6 W Typical Psat • 40 V Operation • U... |
| Datasheet |
 CGHV1J006D Datasheet
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