| Part Number | CFG40006S |
| Manufacturer | Cree |
| Title | RF Power GaN HEMT |
| Description | CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG... |
| Features |
• Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.0 GHz • 8 W typical at PIN = 32 dBm • 65 % Efficiency at PIN = 32 dBm • 28 V Operation • 3mm x 3mm Package APPLICATIONS • 2-Way Private Radio • Broa... |
| Datasheet |
 CFG40006S Datasheet
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