| Part Number | BTD2114N3 |
| Manufacturer | CYStech |
| Title | High Current Gain Medium Power NPN Epitaxial Planar Transistor |
| Description | CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NP... |
| Features |
• High Emitter-Base voltage, VEBO=12V(min). • High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. • Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA. • Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：E... |
| Datasheet |
 BTD2114N3 Datasheet
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