| Part Number | CGHV96050F1 |
| Manufacturer | CREE |
| Title | Input/Output Matched GaN HEMT |
| Description | Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Ma... |
| Features |
• 7.9 - 8.4 GHz Operation • • 80 W POUT typical >13 dB Power Gain • 33% Typical PAE • 50 Ohm Internally Matched • <0.1 dB Power Droop Applications • Satellite Communication • Terrestrial Broadband Large Signal Models Available for ADS and MWO... |
| Datasheet |
 CGHV96050F1 Datasheet
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