| Part Number | CGH40120F |
| Manufacturer | CREE |
| Title | RF Power GaN HEMT |
| Description | CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F... |
| Features |
• Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.0 GHz • 120 W Typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrast... |
| Datasheet |
 CGH40120F Datasheet
|
