| Part Number | CG2H40025 |
| Manufacturer | CREE |
| Title | RF Power GaN HEMT |
| Description | CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H4... |
| Features |
• Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastruc... |
| Datasheet |
 CG2H40025 Datasheet
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