| Part Number | CEE02N6G |
| Manufacturer | CET |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extr... |
| Features |
600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package.
D
G
CEE SERIES TO-126
S
ABSOLUTE MAXIMUM RATINGS Tc = 2...
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| Datasheet |
 CEE02N6G Datasheet
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