| Part Number | NESG2031M05 |
| Manufacturer | CEL |
| Title | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Description | NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications inc... |
| Features |
• • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of onl... |
| Datasheet |
 NESG2031M05 Datasheet
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