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NESG2021M16

CEL
Part Number NESG2021M16
Manufacturer CEL
Title HIGH FREQUENCY TRANSISTOR
Description NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications inc...
Features
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIP...

Datasheet PDF File NESG2021M16 Datasheet

NESG2021M16   NESG2021M16   NESG2021M16  




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