| Part Number | NESG2021M05 |
| Manufacturer | CEL |
| Title | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Description | NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications inc... |
| Features |
• • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only ... |
| Datasheet |
 NESG2021M05 Datasheet
|
