| Part Number | NE856M02 |
| Manufacturer | CEL |
| Title | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| Description | E B E 0.42 ±0.06 1.5 3.0 0.45 ±0.06 0.42 ±0.06 3.95±0.26 C 2.45±0.1 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICA... |
| Features |
• • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BO... |
| Datasheet |
 NE856M02 Datasheet
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